標題: | Analysis of high-field hole transport characteristics in Si1-xGex alloys with a bond orbital band structure |
作者: | Liou, TS Wang, TH Chang, CY 交大名義發表 電子工程學系及電子研究所 National Chiao Tung University Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-一月-1996 |
摘要: | We present an analysis of high-field hole transport in strained Si1-xGex alloys using a Monte Carlo technique. A bond orbital model is employed to calculate the valence-band structure in the simulation so that the transport behavior of high-energy holes can be described accurately. The model combines the k . p and the tight binding methods and contains no fitting parameters. The spin-orbit interaction and lattice-mismatch-induced biaxial compressive strain are included in the model. The steady state hole drift velocity and the impact ionization rate are calculated as a function of an electric field up to 500 kV/cm. Good agreement between experiment and simulation is obtained. (C) 1996 American Institute of Physics. |
URI: | http://hdl.handle.net/11536/1564 |
ISSN: | 0021-8979 |
期刊: | JOURNAL OF APPLIED PHYSICS |
Volume: | 79 |
Issue: | 1 |
起始頁: | 259 |
結束頁: | 263 |
顯示於類別: | 期刊論文 |