標題: Analysis of high-field hole transport characteristics in Si1-xGex alloys with a bond orbital band structure
作者: Liou, TS
Wang, TH
Chang, CY
交大名義發表
電子工程學系及電子研究所
National Chiao Tung University
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-一月-1996
摘要: We present an analysis of high-field hole transport in strained Si1-xGex alloys using a Monte Carlo technique. A bond orbital model is employed to calculate the valence-band structure in the simulation so that the transport behavior of high-energy holes can be described accurately. The model combines the k . p and the tight binding methods and contains no fitting parameters. The spin-orbit interaction and lattice-mismatch-induced biaxial compressive strain are included in the model. The steady state hole drift velocity and the impact ionization rate are calculated as a function of an electric field up to 500 kV/cm. Good agreement between experiment and simulation is obtained. (C) 1996 American Institute of Physics.
URI: http://hdl.handle.net/11536/1564
ISSN: 0021-8979
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 79
Issue: 1
起始頁: 259
結束頁: 263
顯示於類別:期刊論文