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dc.contributor.authorChen, Yu-Chihen_US
dc.contributor.authorPu, Ying-Chihen_US
dc.contributor.authorHsu, Yung-Jungen_US
dc.date.accessioned2014-12-08T15:22:03Z-
dc.date.available2014-12-08T15:22:03Z-
dc.date.issued2012-02-02en_US
dc.identifier.issn1932-7447en_US
dc.identifier.urihttp://dx.doi.org/10.1021/jp210033yen_US
dc.identifier.urihttp://hdl.handle.net/11536/15643-
dc.description.abstractThe interfacial charge carrier dynamics of the three-component semiconductor semiconductor-metal heterojunction system were investigated and presented for the first time. The samples were prepared by selectively depositing Pt nanoparticles on the TiO2 surface of In2O3-decorated TiO2 nanobelts (In2O3-TiO2 nanobelts (NBs)) using the typical photodeposition method. For In2O3-TiO2 NBs, because of the difference in band structures between In2O3 and TiO2, the photoexcited electrons of In2O3 nanocrystals would preferentially transfer to TiO2 NBs to cause charge carrier separation. With the introduction of Pt on TiO2 surface, a fluent electron transfer from In2O3, through TiO2, and eventually to Pt was achieved, giving rise to the increasingly pronounced charge separation property for the as-prepared In2O3-TiO2-Pt NBs. The remarkable charge separation of the samples was revealed with the corresponding photocurrent measurements. Time-resolved photoluminescence spectra were measured to quantitatively analyze the electron transfer event between In2O3 and TiO2 for In2O3-TiO2 NBs and its dependence on Pt deposition. Upon the deposition of Pt, In2O3-TiO2 NBs showed an increased apparent electron-scavenging rate constant, fundamentally consistent with the result of their performance evaluation in photocatalysis. The current study provides a new paradigm for designing highly efficient three-component nanoheterojunction photocatalysts which can effectively produce chemical energy from absorbing light.en_US
dc.language.isoen_USen_US
dc.titleInterfacial Charge Carrier Dynamics of the Three-Component In2O3-TiO2-Pt Heterojunction Systemen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/jp210033yen_US
dc.identifier.journalJOURNAL OF PHYSICAL CHEMISTRY Cen_US
dc.citation.volume116en_US
dc.citation.issue4en_US
dc.citation.spage2967en_US
dc.citation.epage2975en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000300462400039-
dc.citation.woscount34-
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