Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Yi-Chia | en_US |
dc.contributor.author | Cheng, Yu-Ting | en_US |
dc.contributor.author | Hsu, Wensyang | en_US |
dc.date.accessioned | 2014-12-08T15:22:10Z | - |
dc.date.available | 2014-12-08T15:22:10Z | - |
dc.date.issued | 2012 | en_US |
dc.identifier.issn | 0013-4651 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/15706 | - |
dc.identifier.uri | http://dx.doi.org/10.1149/2.002205jes | en_US |
dc.description.abstract | The paper investigates the formation of stress gradient in electroplated Ni-based nanocomposite films and presents a process scheme to effectively reduce the stress by lowering plating current density. The stress gradient is characterized by measuring the radius of curvature from the surface profile of Ni-based micro-cantilever beams. For the case of the Ni-based films plated with the current density from 15.3 down to 0.8 mA/cm(2), the stress gradient of the films is formed in the range of -7.13 to -3.23 MPa/mu m. According to the cross sectional SEM images, it is found that the Ni-based film plated with 0.8 mA/cm(2) can have a uniformly distributed grain size that can result in a lower stress gradient. By lowering the plating current density from 15.3 to 0.8 mA/cm(2), about 41% and 21% of the stress gradient reduction can be realized in the Ni and Ni-diamond nanocomposite films, respectively, which can be utilized for MEMS resonator fabrication without having structural warpage. Furthermore, experimental results show that the performance of the Ni-diamond nanocomposite resonator can be enhanced in terms of the increase of resonant frequency and quality factor. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.002205jes] All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Stress Gradient Modification of the Electroplated Ni-Diamond Nanocomposite for MEMS Fabrication | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1149/2.002205jes | en_US |
dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
dc.citation.volume | 159 | en_US |
dc.citation.issue | 4 | en_US |
dc.citation.spage | H460 | en_US |
dc.citation.epage | H466 | en_US |
dc.contributor.department | 機械工程學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Mechanical Engineering | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000300488300101 | - |
dc.citation.woscount | 0 | - |
Appears in Collections: | Articles |
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