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dc.contributor.authorLee, Yi-Chiaen_US
dc.contributor.authorCheng, Yu-Tingen_US
dc.contributor.authorHsu, Wensyangen_US
dc.date.accessioned2014-12-08T15:22:10Z-
dc.date.available2014-12-08T15:22:10Z-
dc.date.issued2012en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://hdl.handle.net/11536/15706-
dc.identifier.urihttp://dx.doi.org/10.1149/2.002205jesen_US
dc.description.abstractThe paper investigates the formation of stress gradient in electroplated Ni-based nanocomposite films and presents a process scheme to effectively reduce the stress by lowering plating current density. The stress gradient is characterized by measuring the radius of curvature from the surface profile of Ni-based micro-cantilever beams. For the case of the Ni-based films plated with the current density from 15.3 down to 0.8 mA/cm(2), the stress gradient of the films is formed in the range of -7.13 to -3.23 MPa/mu m. According to the cross sectional SEM images, it is found that the Ni-based film plated with 0.8 mA/cm(2) can have a uniformly distributed grain size that can result in a lower stress gradient. By lowering the plating current density from 15.3 to 0.8 mA/cm(2), about 41% and 21% of the stress gradient reduction can be realized in the Ni and Ni-diamond nanocomposite films, respectively, which can be utilized for MEMS resonator fabrication without having structural warpage. Furthermore, experimental results show that the performance of the Ni-diamond nanocomposite resonator can be enhanced in terms of the increase of resonant frequency and quality factor. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.002205jes] All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleStress Gradient Modification of the Electroplated Ni-Diamond Nanocomposite for MEMS Fabricationen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/2.002205jesen_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume159en_US
dc.citation.issue4en_US
dc.citation.spageH460en_US
dc.citation.epageH466en_US
dc.contributor.department機械工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Mechanical Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000300488300101-
dc.citation.woscount0-
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