完整後設資料紀錄
DC 欄位語言
dc.contributor.authorKao, Chen-Yenen_US
dc.contributor.authorHsin, Cheng-Lunen_US
dc.contributor.authorHuang, Chun-Weien_US
dc.contributor.authorYu, Shih-Yingen_US
dc.contributor.authorWang, Chun-Wenen_US
dc.contributor.authorYeh, Ping-Hungen_US
dc.contributor.authorWu, Wen-Weien_US
dc.date.accessioned2014-12-08T15:22:11Z-
dc.date.available2014-12-08T15:22:11Z-
dc.date.issued2012en_US
dc.identifier.issn2040-3364en_US
dc.identifier.urihttp://hdl.handle.net/11536/15712-
dc.identifier.urihttp://dx.doi.org/10.1039/c1nr10742aen_US
dc.description.abstractIn this article, ZnO nanostructures were synthesized via the hydrothermal method which used ZnCl2 and HMTA mixed solution as the precursor. A multistep growth was adopted to improve the growth restriction of a closed system, not only the length but also the aspect ratio were increased with steps of growth, and the shape of nanorods maintained integrity. Furthermore, photoluminescence spectra which have the near-band-edge-emission (similar to 3.37 eV) and defect-related emission show the optical properties of ZnO nanostructures. The defect-related emission intensity was greatly enhanced with the increasing surface area of ZnO nanowires. The level of the OH group was attributed to the yellow-light emission (similar to 580 nm) and the red-shift phenomenon. In addition, we fabricated two types of ultraviolet photodetectors: a single nanowire device and a nanowire-array device, operating at a low bias (less than 5 mV). With the lower energy consumption and the weaker persistent photoconductive effect, our ultraviolet photodetectors have better performance, exhibiting a short response time and higher sensitivity.en_US
dc.language.isoen_USen_US
dc.titleHigh-yield synthesis of ZnO nanowire arrays and their opto-electrical propertiesen_US
dc.typeArticleen_US
dc.identifier.doi10.1039/c1nr10742aen_US
dc.identifier.journalNANOSCALEen_US
dc.citation.volume4en_US
dc.citation.issue5en_US
dc.citation.spage1476en_US
dc.citation.epage1480en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000300433700010-
dc.citation.woscount16-
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