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dc.contributor.authorWu, Chia-Yangen_US
dc.contributor.authorLee, Wen-Hsien_US
dc.contributor.authorChang, Shih-Chiehen_US
dc.contributor.authorWang, Ying-Langen_US
dc.date.accessioned2014-12-08T15:22:12Z-
dc.date.available2014-12-08T15:22:12Z-
dc.date.issued2011-12-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.50.121803en_US
dc.identifier.urihttp://hdl.handle.net/11536/15718-
dc.description.abstractIn this study, we investigated the galvanic effect between the Cu metals and ruthenium nitride (RuNx) films that were deposited at various nitrogen (N-2) gas flow rates in chemical mechanical polishing slurries. It was found that the galvanic corrosion of the RuNx films was inhibited with increasing N-2 gas flow ratio, whereas the galvanic corrosion of the Cu seed layers was enhanced. Electrochemical impedance spectroscopy showed that the galvanic corrosion resistance of RuNx increased and that of the ruthenium oxide layer decreased as N-2 flow ratio increased. This was because the increase in the N content in the RuNx films inhibited the corrosion and oxidation of the Ru metals. (C) 2011 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleInvestigation of the Galvanic Effect between RuN Barriers and Cu Seed Layersen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.50.121803en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume50en_US
dc.citation.issue12en_US
dc.citation.epageen_US
dc.contributor.department照明與能源光電研究所zh_TW
dc.contributor.departmentInstitute of Lighting and Energy Photonicsen_US
dc.identifier.wosnumberWOS:000300707400026-
dc.citation.woscount1-
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