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dc.contributor.authorLee, WDen_US
dc.contributor.authorYang, TJen_US
dc.contributor.authorChiou, BSen_US
dc.date.accessioned2014-12-08T15:02:58Z-
dc.date.available2014-12-08T15:02:58Z-
dc.date.issued1996-01-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.35.76en_US
dc.identifier.urihttp://hdl.handle.net/11536/1572-
dc.description.abstractConsidering the resistivity of a silver base and the contact resistance of a silver base with a bulk superconductor, the dependence of average critical current density J(c)(D,H-a) of a high-T-c, oxide superconductor deposited oil a silver base on the sample dimension D and the applied magnetic field H-a is calculated using a generalized critical-state model, which was recently extended to low field by Chen and Yang [Physica C 224 (1994) 345]. The self-field effect of the average critical current was also taken into account in the model. Based on the generalized critical state model, new behaviors of J(c)(D, H-a) in the low-field range of H-c1 less than or equal to H-a much less than H-c2 are obtained. In addition, a constant J(c)(D, H-a) for 0 less than or equal to H-a less than or equal to H-c1 is obtained, which is different from the results derived from a model that does not include the self-field effect. However, these theoretical results can be fitted to the experimental data to obtain some important macroscopic material parameters and may be used to interpret the dimension effect of transport J(c) of a high-T-c oxide superconductor deposited on a silver base.en_US
dc.language.isoen_USen_US
dc.subjectcritical current densityen_US
dc.subjecthigh-T-c oxide superconductoren_US
dc.subjectsilver baseen_US
dc.subjectself-field effecten_US
dc.titleAnalysis of average transport critical current density of oxide superconductors deposited on a silver baseen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.35.76en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume35en_US
dc.citation.issue1Aen_US
dc.citation.spage76en_US
dc.citation.epage81en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:A1996TU37000013-
dc.citation.woscount0-
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