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dc.contributor.authorTsai, C. C.en_US
dc.contributor.authorHsu, C. H.en_US
dc.contributor.authorHsu, H. J.en_US
dc.contributor.authorCheng, P. H.en_US
dc.contributor.authorWang, C. M.en_US
dc.contributor.authorHuang, Y. T.en_US
dc.date.accessioned2014-12-08T15:22:14Z-
dc.date.available2014-12-08T15:22:14Z-
dc.date.issued2011en_US
dc.identifier.issn1862-6351en_US
dc.identifier.urihttp://hdl.handle.net/11536/15748-
dc.identifier.urihttp://dx.doi.org/10.1002/pssc.201001229en_US
dc.description.abstractThis paper focuses on the optimization of the absorber layers in single-junction a-Si:H and a-Si1-xGex:H solar cells. For a-Si:H thin-film solar cells, we have found the electrode-to-substrate (E/S) spacing is an important parameter. By optimizing the E/S spacing, the cell effi-ciency was improved from 7.62% to 8.70% due to an improvement in material quality and JSC. For a-Si1-xGex:H solar cells, by optimizing the Ge-content, the microstructure parameter and the graded bandgap, we were able to improve the cell efficiency to 8.15%. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheimen_US
dc.language.isoen_USen_US
dc.subjectphotovoltaicsen_US
dc.subjectthin film solar cellsen_US
dc.subjecta-Si:Hen_US
dc.subjectamorphous Si-Ge alloyen_US
dc.titleOptimization of the absorber layer for a-Si:H and a-Si1-xGex:H single-junction solar cellsen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1002/pssc.201001229en_US
dc.identifier.journalPHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 10en_US
dc.citation.volume8en_US
dc.citation.issue10en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000301591500005-
Appears in Collections:Conferences Paper


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