Optimization of the absorber layer for a-Si:H and a-Si1-xGex:H single-junction solar cells

doi:10.1002/pssc.201001229

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DC 欄位	值	語言
dc.contributor.author	Tsai, C. C.	en_US
dc.contributor.author	Hsu, C. H.	en_US
dc.contributor.author	Hsu, H. J.	en_US
dc.contributor.author	Cheng, P. H.	en_US
dc.contributor.author	Wang, C. M.	en_US
dc.contributor.author	Huang, Y. T.	en_US
dc.date.accessioned	2014-12-08T15:22:14Z	-
dc.date.available	2014-12-08T15:22:14Z	-
dc.date.issued	2011	en_US
dc.identifier.issn	1862-6351	en_US
dc.identifier.uri	http://hdl.handle.net/11536/15748	-
dc.identifier.uri	http://dx.doi.org/10.1002/pssc.201001229	en_US
dc.description.abstract	This paper focuses on the optimization of the absorber layers in single-junction a-Si:H and a-Si1-xGex:H solar cells. For a-Si:H thin-film solar cells, we have found the electrode-to-substrate (E/S) spacing is an important parameter. By optimizing the E/S spacing, the cell effi-ciency was improved from 7.62% to 8.70% due to an improvement in material quality and JSC. For a-Si1-xGex:H solar cells, by optimizing the Ge-content, the microstructure parameter and the graded bandgap, we were able to improve the cell efficiency to 8.15%. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim	en_US
dc.language.iso	en_US	en_US
dc.subject	photovoltaics	en_US
dc.subject	thin film solar cells	en_US
dc.subject	a-Si:H	en_US
dc.subject	amorphous Si-Ge alloy	en_US
dc.title	Optimization of the absorber layer for a-Si:H and a-Si1-xGex:H single-junction solar cells	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1002/pssc.201001229	en_US
dc.identifier.journal	PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 10	en_US
dc.citation.volume	8	en_US
dc.citation.issue	10	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000301591500005	-
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