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dc.contributor.authorHuang, B. C.en_US
dc.contributor.authorChen, Y. T.en_US
dc.contributor.authorChiu, Y. P.en_US
dc.contributor.authorHuang, Y. C.en_US
dc.contributor.authorYang, J. C.en_US
dc.contributor.authorChen, Y. C.en_US
dc.contributor.authorChu, Y. H.en_US
dc.date.accessioned2014-12-08T15:22:19Z-
dc.date.available2014-12-08T15:22:19Z-
dc.date.issued2012-03-19en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3691615en_US
dc.identifier.urihttp://hdl.handle.net/11536/15799-
dc.description.abstractThis study presents a direct visualization of the influences of ferroelectric polarization on the electronic properties of the Schottky contact at the Nb-SrTiO3/BiFeO3 hetero-interface using scanning tunneling microscopy and spectroscopy (STM/S). The evolution of the local density of states across the Nb-SrTiO3/BiFeO3 interface reveals the interfacial band alignment and the characteristic quantities of the metal/ferroelectric contact. The unique combination of STM and STS in this study delivers an approach to obtain critical information on the interfacial electronic configurations of ferroelectric oxide interfaces and also their variation with ferroelectric polarization switching. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3691615]en_US
dc.language.isoen_USen_US
dc.titleDirect observation of ferroelectric polarization-modulated band bending at oxide interfacesen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3691615en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume100en_US
dc.citation.issue12en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000302228700058-
dc.citation.woscount11-
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