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dc.contributor.authorLin, Chien-Chungen_US
dc.contributor.authorChen, Hsin-Chuen_US
dc.contributor.authorTsai, Yu Linen_US
dc.contributor.authorHan, Hau-Veien_US
dc.contributor.authorShih, Huai-Shiangen_US
dc.contributor.authorChang, Yi-Anen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorYu, Peichenen_US
dc.date.accessioned2019-04-03T06:36:35Z-
dc.date.available2019-04-03T06:36:35Z-
dc.date.issued2012-03-12en_US
dc.identifier.issn1094-4087en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OE.20.00A319en_US
dc.identifier.urihttp://hdl.handle.net/11536/15805-
dc.description.abstractWe demonstrate a hybrid design of traditional GaAs-based solar cell combined with colloidal CdS quantum dots. With anti-reflective feature at long wavelength and down-conversion at UV regime, the CdS quantum dot effectively enhance the overall power conversion efficiency by as high as 18.9% compared to traditional GaAs-based device. A more detailed study showed an increase of surface photoconductivity due to UV presence, and the fill factor of the solar cell can be improved accordingly. (C) 2012 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleHighly efficient CdS-quantum-dot-sensitized GaAs solar cellsen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OE.20.00A319en_US
dc.identifier.journalOPTICS EXPRESSen_US
dc.citation.volume20en_US
dc.citation.issue6en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department光電系統研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000301877700018en_US
dc.citation.woscount29en_US
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