標題: | Photoluminescence associated with basal stacking faults in c-plane ZnO epitaxial film grown by atomic layer deposition |
作者: | Yang, S. Kuo, C. C. Liu, W. -R. Lin, B. H. Hsu, H. -C. Hsu, C. -H. Hsieh, W. F. 光電工程學系 Department of Photonics |
公開日期: | 5-三月-2012 |
摘要: | Basal plane stacking faults (BSFs) with density of similar to 1 x 10(6) cm(-1) are identified as the dominant defect in the annealed ZnO thin films grown on c-plane sapphire by atomic layer deposition. The dominant peak centered at 3.321 eV in low-temperature photoluminescence measurements is attributed to the emission from the BSFs. The emission mechanism is considered to be the confined indirect excitons in the region of quantum-well-like structure formed by the BSFs. The observed energy shift of 19 meV with respect to the BSF-bounded exciton at low temperature may be caused by the localization effect associated with the coupling between BSF quantum wells. (C) 2012 American Institute of Physics. [http://dx.doi. org/10.1063/1.3692730] |
URI: | http://dx.doi.org/10.1063/1.3692730 http://hdl.handle.net/11536/15806 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.3692730 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 100 |
Issue: | 10 |
結束頁: | |
顯示於類別: | 期刊論文 |