Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chang, Yuan-Ming | en_US |
dc.contributor.author | Liu, Mao-Chen | en_US |
dc.contributor.author | Kao, Pin-Hsu | en_US |
dc.contributor.author | Lin, Chih-Ming | en_US |
dc.contributor.author | Lee, Hsin-Yi | en_US |
dc.contributor.author | Juang, Jenh-Yih | en_US |
dc.date.accessioned | 2014-12-08T15:22:20Z | - |
dc.date.available | 2014-12-08T15:22:20Z | - |
dc.date.issued | 2012-03-01 | en_US |
dc.identifier.issn | 1944-8244 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1021/am201667m | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/15814 | - |
dc.description.abstract | An effective method of fabricating vertically aligned silicon nanopillars (Si-NPs) was realized by using the self-assembled silver (Ag) nanodots as natural metal-nanomask during dry etching process. The obtained Si-NPs were preferentially aligned along the c-axis direction. Ultrathin ZnO films (similar to 9 nm) were subsequently deposited on the Si-NPs by atomic layer deposition (ALD) to enhance the field emission property. The average diameter of the ZnO/Si-NPs is in the order of tens of nanometers, which enables efficient field emission and gives rise to marked improvement in the field enhancement factor, beta. The turn-on field defined by the 10 mu A/cm(2) current density criterion is similar to 0.74 V/mu m with an estimated beta approximate to 1.33x10(4). The low turn-on field and marked enhancement in beta were attributed to the small radius of curvature, high aspect ratio, and perhaps more importantly, proper density distribution of the ZnO/Si-NPs. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | filed emission | en_US |
dc.subject | ZnO | en_US |
dc.subject | silicon nanopillars | en_US |
dc.subject | atomic layer deposition | en_US |
dc.title | Field Emission in Vertically Aligned ZnO/Si-Nanopillars with Ultra Low Turn-On Field | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1021/am201667m | en_US |
dc.identifier.journal | ACS APPLIED MATERIALS & INTERFACES | en_US |
dc.citation.volume | 4 | en_US |
dc.citation.issue | 3 | en_US |
dc.citation.spage | 1411 | en_US |
dc.citation.epage | 1416 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000301968400038 | - |
dc.citation.woscount | 14 | - |
Appears in Collections: | Articles |
Files in This Item:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.