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dc.contributor.authorLai, Kuo-Weien_US
dc.contributor.authorLee, Yi-Shanen_US
dc.contributor.authorFu, Ying-Jheen_US
dc.contributor.authorLin, Sheng-Dien_US
dc.date.accessioned2014-12-08T15:22:22Z-
dc.date.available2014-12-08T15:22:22Z-
dc.date.issued2012-02-13en_US
dc.identifier.issn1094-4087en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OE.20.003572en_US
dc.identifier.urihttp://hdl.handle.net/11536/15839-
dc.description.abstractWe propose and demonstrate a novel device structure of resonant cavity-enhanced photodetector (RCE-PD). The new RCE-PD structure consists of a bottom distributed Bragg reflector (DBR), a cavity with InGaAs multiple quantum wells (MQWs) for light absorption and a top mirror of sub-wavelength grating. By changing the fill factor of the 2-D grating, the effective cavity length of RCE-PDs can be varied so the resonant wavelength can be selected post growth. Accordingly, we can fabricate an array of PDs on a single chip, on which every PD aims for a specific wavelength. (C) 2012 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleSelecting detection wavelength of resonant cavity-enhanced photodetectors by guided-mode resonance reflectorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OE.20.003572en_US
dc.identifier.journalOPTICS EXPRESSen_US
dc.citation.volume20en_US
dc.citation.issue4en_US
dc.citation.spage3572en_US
dc.citation.epage3579en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000301041900023-
dc.citation.woscount3-
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