完整後設資料紀錄
DC 欄位語言
dc.contributor.authorHo, Yingchiehen_US
dc.contributor.authorSu, Chauchinen_US
dc.date.accessioned2014-12-08T15:22:37Z-
dc.date.available2014-12-08T15:22:37Z-
dc.date.issued2012-05-01en_US
dc.identifier.issn0018-9200en_US
dc.identifier.urihttp://hdl.handle.net/11536/15998-
dc.description.abstractThis paper presents a 40-130 fJ/bit/ch on-chip data link design under a 0.1-0.3V power supply. A bootstrapped CMOS repeater is proposed to drive a 10 mm on-chip bus. It features a -V-DD to 2V(DD) swing to enhance the driving capability and reduces the sub-threshold leakage current. Additionally, a precharge enhancement scheme increases the speed of the data transmission, and a leakage current reduction technique suppresses ISI jitter. A test chip is fabricated in a 55 nm SPRVT Low-K CMOS process. The measured results demonstrate that for a 10 mm on-chip bus, the achievable data rate is 0.8-100 Mbps, and the energy consumption is 40-123 fJ per bit under 0.1-0.3 V-DD.en_US
dc.language.isoen_USen_US
dc.subjectBootstrapped circuiten_US
dc.subjectenergy efficienten_US
dc.subjectinter-symbol interference (ISI)en_US
dc.subjectlow-voltageen_US
dc.subjectleakage current reduction low-poweren_US
dc.subjectsub-threshold circuiten_US
dc.titleA 0.1-0.3 V 40-123 fJ/bit/ch On-Chip Data Link With ISI-Suppressed Bootstrapped Repeatersen_US
dc.typeArticleen_US
dc.identifier.journalIEEE JOURNAL OF SOLID-STATE CIRCUITSen_US
dc.citation.volume47en_US
dc.citation.issue5en_US
dc.citation.epage1242en_US
dc.contributor.department電機工程學系zh_TW
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:000303329600018-
dc.citation.woscount0-
顯示於類別:期刊論文


文件中的檔案:

  1. 000303329600018.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。