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dc.contributor.authorChen, Hsiao-Yunen_US
dc.contributor.authorLin, Han-Wenen_US
dc.contributor.authorLiu, Chien-Minen_US
dc.contributor.authorChang, Yuan-Weien_US
dc.contributor.authorHuang, Annie T.en_US
dc.contributor.authorChen, Chihen_US
dc.date.accessioned2014-12-08T15:22:41Z-
dc.date.available2014-12-08T15:22:41Z-
dc.date.issued2012-05-01en_US
dc.identifier.issn1359-6462en_US
dc.identifier.urihttp://hdl.handle.net/11536/16015-
dc.description.abstractTitanium has a very large heat of transport value of -768 kJ mol(-1). However, thermomigration of Ti in solder joints has not been examined. In this study, void formation was observed in non-current-stressed Al traces during electromigration and thermomigration tests of SnAg solder joints. Voids formed inside the traces located above the solder bumps with no current flow. We found that Ti thermomigration occurred in the joint, resulting in the reaction of Al and Cu, leaving voids behind in the Al trace. (C) 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectDiffusionen_US
dc.subjectIntermetallic compoundsen_US
dc.subjectSolderingen_US
dc.subjectTitaniumen_US
dc.titleThermomigration of Ti in flip-chip solder jointsen_US
dc.typeArticleen_US
dc.identifier.journalSCRIPTA MATERIALIAen_US
dc.citation.volume66en_US
dc.citation.issue9en_US
dc.citation.epage694en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000302425100021-
dc.citation.woscount3-
Appears in Collections:Articles


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