Thermomigration of Ti in flip-chip solder joints

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DC 欄位	值	語言
dc.contributor.author	Chen, Hsiao-Yun	en_US
dc.contributor.author	Lin, Han-Wen	en_US
dc.contributor.author	Liu, Chien-Min	en_US
dc.contributor.author	Chang, Yuan-Wei	en_US
dc.contributor.author	Huang, Annie T.	en_US
dc.contributor.author	Chen, Chih	en_US
dc.date.accessioned	2014-12-08T15:22:41Z	-
dc.date.available	2014-12-08T15:22:41Z	-
dc.date.issued	2012-05-01	en_US
dc.identifier.issn	1359-6462	en_US
dc.identifier.uri	http://hdl.handle.net/11536/16015	-
dc.description.abstract	Titanium has a very large heat of transport value of -768 kJ mol(-1). However, thermomigration of Ti in solder joints has not been examined. In this study, void formation was observed in non-current-stressed Al traces during electromigration and thermomigration tests of SnAg solder joints. Voids formed inside the traces located above the solder bumps with no current flow. We found that Ti thermomigration occurred in the joint, resulting in the reaction of Al and Cu, leaving voids behind in the Al trace. (C) 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	Diffusion	en_US
dc.subject	Intermetallic compounds	en_US
dc.subject	Soldering	en_US
dc.subject	Titanium	en_US
dc.title	Thermomigration of Ti in flip-chip solder joints	en_US
dc.type	Article	en_US
dc.identifier.journal	SCRIPTA MATERIALIA	en_US
dc.citation.volume	66	en_US
dc.citation.issue	9	en_US
dc.citation.epage	694	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000302425100021	-
dc.citation.woscount	3	-
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