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dc.contributor.authorLin, Yan-Mingen_US
dc.contributor.authorJiang, Zhen-Yien_US
dc.contributor.authorZhu, Chao-Yuanen_US
dc.contributor.authorHu, Xiao-Yunen_US
dc.contributor.authorZhang, Xiao-Dongen_US
dc.contributor.authorFan, Junen_US
dc.date.accessioned2014-12-08T15:22:42Z-
dc.date.available2014-12-08T15:22:42Z-
dc.date.issued2012-04-16en_US
dc.identifier.issn0254-0584en_US
dc.identifier.urihttp://hdl.handle.net/11536/16033-
dc.description.abstractThe geometrical structures and electronic properties of Ni-doped anatase and rutile TiO2 were successfully calculated and simulated by a plane wave pseudopotential method based on density functional theory (OFT). Our results show that most Ni 3d states are located in the forbidden band of substitutional Ni to O-doped anatase and rutile TiO2, and mix with O 2p states, resulting in a decrease of the photon excitation energy and red-shift of absorption edge compared to pure anatase and rutile. For substitutional Ni to Ti-doped anatase TiO2 under O-rich growth condition, the band gap has a slight decline of about 0.05 eV compared with pure anatase TiO2 and contains a series of impurity energy levels, which may be responsible for the experimental photocatalytic activity and red-shift of absorption edge. (C) 2012 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectSemiconductorsen_US
dc.subjectAb initio calculationsen_US
dc.subjectElectronic structureen_US
dc.subjectOptical propertiesen_US
dc.titleVisible-light photocatalytic activity of Ni-doped TiO2 from ab initio calculationsen_US
dc.typeArticleen_US
dc.identifier.journalMATERIALS CHEMISTRY AND PHYSICSen_US
dc.citation.volume133en_US
dc.citation.issue2-3en_US
dc.citation.epage746en_US
dc.contributor.department應用化學系分子科學碩博班zh_TW
dc.contributor.departmentInstitute of Molecular scienceen_US
dc.identifier.wosnumberWOS:000303281500028-
dc.citation.woscount10-
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