完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Weng, Meng Hsiung | en_US |
dc.contributor.author | Chen, Hsin-Tsung | en_US |
dc.contributor.author | Wang, Yao-Chun | en_US |
dc.contributor.author | Ju, Shin-Pon | en_US |
dc.contributor.author | Chang, Jee-Gong | en_US |
dc.contributor.author | Lin, M. C. | en_US |
dc.date.accessioned | 2014-12-08T15:22:43Z | - |
dc.date.available | 2014-12-08T15:22:43Z | - |
dc.date.issued | 2012-04-03 | en_US |
dc.identifier.issn | 0743-7463 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/16047 | - |
dc.description.abstract | The adsorption, dissociation, and diffusion of hydrogen in Ni(100) and Ni(100)/YSZ(100) slabs with two different interfaces (Ni/cation and Ni/O interface) have been studied by the density functional theory (DFT) with the Perdew-Wang functional. The H-2 molecule is found to preferentially absorb on a Top (T) site with side-on configuration on the Ni(100) surface, while the H-atom is strongly bound at a fcc Hollow (H) site. The barrier for the H-2 dissociation on both surfaces is calculated to be only similar to 0.1 eV. The potential energy pathways of H diffusion on pure Ni and Ni/YSZ with the two different interfaces are studied. Our calculated results show that the H-atom diffusion occurs via surface path rather than the bulk path. For the bulk path in Ni/YSZ, H-atom migration can occur more readily at the Ni/cation interface compared to the Ni/O interface. The existence of vacancy in the interface region is found to improve the mobility of H-atoms at the interface of Ni/YSZ slab. The rate constants for hydrogen dissociation and diffusion in pure Ni and Ni/YSZ are predicted. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Kinetics and Mechanisms for the Adsorption, Dissociation, and Diffusion of Hydrogen in Ni and Ni/YSZ Slabs: A DFT Study | en_US |
dc.type | Article | en_US |
dc.identifier.journal | LANGMUIR | en_US |
dc.citation.volume | 28 | en_US |
dc.citation.issue | 13 | en_US |
dc.citation.epage | 5596 | en_US |
dc.contributor.department | 應用化學系 | zh_TW |
dc.contributor.department | 應用化學系分子科學碩博班 | zh_TW |
dc.contributor.department | Department of Applied Chemistry | en_US |
dc.contributor.department | Institute of Molecular science | en_US |
dc.identifier.wosnumber | WOS:000302852000015 | - |
dc.citation.woscount | 5 | - |
顯示於類別: | 期刊論文 |