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dc.contributor.authorWeng, Meng Hsiungen_US
dc.contributor.authorChen, Hsin-Tsungen_US
dc.contributor.authorWang, Yao-Chunen_US
dc.contributor.authorJu, Shin-Ponen_US
dc.contributor.authorChang, Jee-Gongen_US
dc.contributor.authorLin, M. C.en_US
dc.date.accessioned2014-12-08T15:22:43Z-
dc.date.available2014-12-08T15:22:43Z-
dc.date.issued2012-04-03en_US
dc.identifier.issn0743-7463en_US
dc.identifier.urihttp://hdl.handle.net/11536/16047-
dc.description.abstractThe adsorption, dissociation, and diffusion of hydrogen in Ni(100) and Ni(100)/YSZ(100) slabs with two different interfaces (Ni/cation and Ni/O interface) have been studied by the density functional theory (DFT) with the Perdew-Wang functional. The H-2 molecule is found to preferentially absorb on a Top (T) site with side-on configuration on the Ni(100) surface, while the H-atom is strongly bound at a fcc Hollow (H) site. The barrier for the H-2 dissociation on both surfaces is calculated to be only similar to 0.1 eV. The potential energy pathways of H diffusion on pure Ni and Ni/YSZ with the two different interfaces are studied. Our calculated results show that the H-atom diffusion occurs via surface path rather than the bulk path. For the bulk path in Ni/YSZ, H-atom migration can occur more readily at the Ni/cation interface compared to the Ni/O interface. The existence of vacancy in the interface region is found to improve the mobility of H-atoms at the interface of Ni/YSZ slab. The rate constants for hydrogen dissociation and diffusion in pure Ni and Ni/YSZ are predicted.en_US
dc.language.isoen_USen_US
dc.titleKinetics and Mechanisms for the Adsorption, Dissociation, and Diffusion of Hydrogen in Ni and Ni/YSZ Slabs: A DFT Studyen_US
dc.typeArticleen_US
dc.identifier.journalLANGMUIRen_US
dc.citation.volume28en_US
dc.citation.issue13en_US
dc.citation.epage5596en_US
dc.contributor.department應用化學系zh_TW
dc.contributor.department應用化學系分子科學碩博班zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.contributor.departmentInstitute of Molecular scienceen_US
dc.identifier.wosnumberWOS:000302852000015-
dc.citation.woscount5-
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