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dc.contributor.authorFang, Yen-Hsiangen_US
dc.contributor.authorFu, Yi-Kengen_US
dc.contributor.authorXuan, Rongen_US
dc.date.accessioned2014-12-08T15:22:44Z-
dc.date.available2014-12-08T15:22:44Z-
dc.date.issued2012-04-01en_US
dc.identifier.issn0031-8949en_US
dc.identifier.urihttp://dx.doi.org/045703en_US
dc.identifier.urihttp://hdl.handle.net/11536/16055-
dc.description.abstractIn this paper, we investigate the differences between optical and electrical properties of near-ultraviolet (NUV) InGaN/GaN multi-quantum well light-emitting diodes (LEDs) grown on GaN substrate with a roughened back-side on the N-face surface of GaN substrate through a chemical wet-etching process, and on pattern sapphire substrate (PSS). Back-side etching-treated NUV-LEDs have larger output power than conventional NUV-LEDs, NUV-LEDs with wider wells and NUV-LEDs grown on PSS. When the NUV-LEDs were operated at a forward current of 20 mA, the output power of back-side etching-treated NUV-LEDs was improved by approximately 100, 106 and 8% compared with that of conventional NUV-LEDs, NUV-LEDs with wider wells and NUV-LEDs grown on PSS, respectively. This larger enhancement results from the improved light extraction that was attributed to the different transmittance because a hexagonal pyramid on the N-face GaN that was etched formed at the stable crystallographic etching planes of the GaN {1011} planes.en_US
dc.language.isoen_USen_US
dc.titleHigh efficiency and output power of near-ultraviolet light-emitting diodes grown on GaN substrate with back-side etchingen_US
dc.typeArticleen_US
dc.identifier.doi045703en_US
dc.identifier.journalPHYSICA SCRIPTAen_US
dc.citation.volume85en_US
dc.citation.issue4en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000303518600024-
dc.citation.woscount3-
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