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dc.contributor.authorYANG, CKen_US
dc.contributor.authorLEE, CLen_US
dc.contributor.authorLEI, TFen_US
dc.contributor.authorCHERN, HNen_US
dc.date.accessioned2014-12-08T15:03:00Z-
dc.date.available2014-12-08T15:03:00Z-
dc.date.issued1995-12-04en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.115252en_US
dc.identifier.urihttp://hdl.handle.net/11536/1605-
dc.description.abstractThe radiation effect on the n-channel polycrystalline silicon (polysilicon) thin-him transistors has been investigated. It is found that for an unhydrogenated device, the irradiation of Co-60 With a total dose of 1 Mrads caused a negative threshold-voltage (V-th) shift and a slight subthreshold-swing (S) degradation, while for a hydrogenated n-channel device, the same irradiation results in a positive V-th Shift and a serious S degradation. It is also found that the radiation hardness of the hydrogenated devices can be improved somewhat by a simple irradiation-then-hydrogenation treatment. (C) 1995 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleRADIATION EFFECTS ON N-CHANNEL POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORSen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.115252en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume67en_US
dc.citation.issue23en_US
dc.citation.spage3477en_US
dc.citation.epage3479en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1995TH28700036-
dc.citation.woscount6-
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