完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLin, Kuo-Fengen_US
dc.contributor.authorHsieh, Wen-Fengen_US
dc.date.accessioned2014-12-08T15:22:44Z-
dc.date.available2014-12-08T15:22:44Z-
dc.date.issued2009en_US
dc.identifier.issn1012-0394en_US
dc.identifier.urihttp://hdl.handle.net/11536/16060-
dc.description.abstractElectronic band structures and surface states were investigated for ZnO finite wells or slabs grown along < 0001 > and < 1-100 > directions using tight binding representation. The dangling bonds on two end-surfaces caused surface bands for different directions grown slabs, of which the wavefunctions tend to localize at the end surfaces. The increasing splitting of the degenerate surface bands at the Gamma point was observed decreasing with the thickness of the nonpolar [1-100] slab. And, the quantum confinement effect is distinctively enhanced by the extra electron-field induced in the < 0001 > grown finite well with the polar end-surfaces.en_US
dc.language.isoen_USen_US
dc.subjectElectronic and electrical propertiesen_US
dc.subjectII-VI semiconductoren_US
dc.subjectElectronic structureen_US
dc.titleElectronic structures and surface states of ZnO finite well structuresen_US
dc.typeProceedings Paperen_US
dc.identifier.journalNANOCOMPOSITE MATERIALSen_US
dc.citation.volume151en_US
dc.citation.spage208en_US
dc.citation.epage212en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000266548300035-
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