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dc.contributor.authorChen, CFen_US
dc.contributor.authorChen, SHen_US
dc.contributor.authorLin, KMen_US
dc.date.accessioned2014-12-08T15:03:01Z-
dc.date.available2014-12-08T15:03:01Z-
dc.date.issued1995-12-01en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://hdl.handle.net/11536/1616-
dc.description.abstractThe unique electronic properties of diamond, associated with the emergence of chemical vapour deposition (CVD) methods for the growth of thin films on non-diamond substrates, have led to considerable interest in electronic devices fabricated from this material. In our previous work, we found that polycrystalline diamond films can be deposited at 250 degrees C using CH4-CO2 gas mixtures. Studying the electrical properties and the upcoming problems of applications of low-temperature diamond films are relevant concerns. In this work, the electrical properties of diamond films grown at low temperatures were studied and compared with those of conventional diamond films. Platinum was used as the upper electrode. The resistivity of low-temperature diamond was around three orders of magnititude lower than that of conventional diamond. However, both the low temperature and conventional growth diamond exihibited rectifying behavior when platinum was used as the upper electrode.en_US
dc.language.isoen_USen_US
dc.subjectdiamonden_US
dc.subjectelectrical properties and measurementsen_US
dc.titleElectrical properties of diamond films grown at low temperatureen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume270en_US
dc.citation.issue1-2en_US
dc.citation.spage205en_US
dc.citation.epage209en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:A1995TM18700039-
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