Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yen, Cheng-Cheng | en_US |
| dc.contributor.author | Ker, Ming-Dou | en_US |
| dc.contributor.author | Liao, Chi-Sheng | en_US |
| dc.contributor.author | Chen, Tung-Yang | en_US |
| dc.contributor.author | Tsai, Chih-Chung | en_US |
| dc.date.accessioned | 2014-12-08T15:22:57Z | - |
| dc.date.available | 2014-12-08T15:22:57Z | - |
| dc.date.issued | 2009 | en_US |
| dc.identifier.isbn | 978-1-4244-4285-0 | en_US |
| dc.identifier.uri | http://hdl.handle.net/11536/16182 | - |
| dc.description.abstract | An on-chip transient-to-digital converter for protection design against electrical fast transient (EFT) is proposed. The proposed transient-to-digital converter is designed to detect fast electrical transients under EFT tests. The output digital codes can correspond to different EFT voltages during the EFT-induced transient disturbances. The experimental results in a 0.18-mu m CMOS integrated circuit (IC) with 3.3-V devices have confirmed the detection function and digital output codes. | en_US |
| dc.language.iso | en_US | en_US |
| dc.subject | converter | en_US |
| dc.subject | electrical fast transient (EFT) test | en_US |
| dc.subject | transient detection circuit | en_US |
| dc.title | Transient-to-Digital Converter for Protection Design in CMOS Integrated Circuits against Electrical Fast Transient | en_US |
| dc.type | Proceedings Paper | en_US |
| dc.identifier.journal | EMC 2009: IEEE INTERNATIONAL SYMPOSIUM ON ELECTROMAGNETIC COMPATIBILITY, TECHNICAL PAPER | en_US |
| dc.citation.spage | 41 | en_US |
| dc.citation.epage | 44 | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.identifier.wosnumber | WOS:000277119400008 | - |
| Appears in Collections: | Conferences Paper | |

