Size-Dependent Trapping Effect in Nano-Dot Non-Volatile Memory

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DC Field	Value	Language
dc.contributor.author	Tsai, C. Y.	en_US
dc.contributor.author	Cheng, C. H.	en_US
dc.contributor.author	Chang, T. Y.	en_US
dc.contributor.author	Chou, K. Y.	en_US
dc.contributor.author	Chin, Albert	en_US
dc.contributor.author	Yeh, F. S.	en_US
dc.date.accessioned	2014-12-08T15:23:05Z	-
dc.date.available	2014-12-08T15:23:05Z	-
dc.date.issued	2011	en_US
dc.identifier.isbn	978-1-60768-257-8	en_US
dc.identifier.issn	1938-5862	en_US
dc.identifier.uri	http://hdl.handle.net/11536/16235	-
dc.description.abstract	We report a flash memory using deep traps nano-dot formed in ZrON charge trapping layers by As+ implantation to improve the device performance of MONOS CTF device. The TaN-[SiO2-LaAlO3]-[As+-implanted ZrON]-[LaAlO3-SiO2]-Si device shows a 6 nm ENT, a large initial memory window of 9.8 V, a 10-year extrapolated retention window of 3.6 V at 85 degrees C, and an endurance window of 5.1 V after 10(5) cycles under fast 100 mu s and low +/- 16 V program/erase. The performance of As+-implanted ZrON is significantly better than that of stacked Si3N4/Ir-dot/HfON device with poor thickness scaling due to excess Ir metal dot.	en_US
dc.language.iso	en_US	en_US
dc.title	Size-Dependent Trapping Effect in Nano-Dot Non-Volatile Memory	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	PHYSICS AND TECHNOLOGY OF HIGH-K MATERIALS 9	en_US
dc.citation.volume	41	en_US
dc.citation.issue	3	en_US
dc.citation.epage	121	en_US
dc.contributor.department	電機工程學系	zh_TW
dc.contributor.department	Department of Electrical and Computer Engineering	en_US
dc.identifier.wosnumber	WOS:000304670400014	-
Appears in Collections:	Conferences Paper

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