完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chang, Chiao-Yun | en_US |
dc.contributor.author | Huang, Huei-Min | en_US |
dc.contributor.author | Lai, Chih Ming | en_US |
dc.contributor.author | Lu, Tien-Chang | en_US |
dc.date.accessioned | 2014-12-08T15:23:07Z | - |
dc.date.available | 2014-12-08T15:23:07Z | - |
dc.date.issued | 2012-07-01 | en_US |
dc.identifier.issn | 0018-9197 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/16260 | - |
dc.description.abstract | In this paper, we investigated polarized light emission properties on a series of a-plane GaN/AlGaN multiple quantum wells grown on r-plane sapphire substrates with various well widths by using the polarization-dependent photoluminescence measurement. To clarify reasons of polarization properties in light emission, we applied the 6 x 6 k.p model to simulate the E-K dispersion relationship and wave functions to obtain optical transitions of different polarized emissions. According to our results, the sub-bands of vertical bar Y>-like states are raised toward the top of the valence sub-band level with increasing the well width. And the optical matrix element of y-polarized light emission will dominate the optical transition, leading to the increase of degree of polarization in the thicker well. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | a-Plane | en_US |
dc.subject | GaN | en_US |
dc.subject | GaN/AlGaN multiple quantum wells | en_US |
dc.subject | nonpolar | en_US |
dc.subject | polarization | en_US |
dc.title | Characteristics of Polarized Light Emission in a-Plane GaN-Based Multiple Quantum Wells | en_US |
dc.type | Article | en_US |
dc.identifier.journal | IEEE JOURNAL OF QUANTUM ELECTRONICS | en_US |
dc.citation.volume | 48 | en_US |
dc.citation.issue | 7 | en_US |
dc.citation.epage | 867 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000304093200005 | - |
dc.citation.woscount | 1 | - |
顯示於類別: | 期刊論文 |