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dc.contributor.authorHong-Quan Nguyenen_US
dc.contributor.authorChang, Edward Yien_US
dc.contributor.authorYu, Hung-Weien_US
dc.contributor.authorHai-Dang Trinhen_US
dc.contributor.authorDee, Chang-Fuen_US
dc.contributor.authorWong, Yuen-Yeeen_US
dc.contributor.authorHsu, Ching-Hsiangen_US
dc.contributor.authorBinh-Tinh Tranen_US
dc.contributor.authorChung, Chen-Chenen_US
dc.date.accessioned2014-12-08T15:23:15Z-
dc.date.available2014-12-08T15:23:15Z-
dc.date.issued2012-05-01en_US
dc.identifier.issn1882-0778en_US
dc.identifier.urihttp://dx.doi.org/055503en_US
dc.identifier.urihttp://hdl.handle.net/11536/16331-
dc.description.abstractHigh quality In0.3Ga0.7As and In0.51Ga0.49As epilayers have been successfully grown on the GaAs substrate by MOCVD. A cross-sectional study by transmission electron microscopy showed that the threading dislocations (TDs) have been successfully contained and limited within the buffer layers designed to stop the elongation of TDs into the In0.3Ga0.7As and In0.51Ga0.49As epilayers. A TD density of 1 x 10(6) cm(-2) in a fully relaxed In0.51Ga0.49As epilayer was achieved. The measurement of lifetimes of n- and p-type In0.51Ga0.49As has been done by using time-resolved photoluminescence. A great reduction in the number of recombination centers in the InGaAs epilayer has been shown. (c) 2012 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleThreading Dislocation Blocking in Metamorphic InGaAs/GaAs for Growing High-Quality In0.5Ga0.5As and In0.3Ga0.7As on GaAs Substrate by Using Metal Organic Chemical Vapor Depositionen_US
dc.typeArticleen_US
dc.identifier.doi055503en_US
dc.identifier.journalAPPLIED PHYSICS EXPRESSen_US
dc.citation.volume5en_US
dc.citation.issue5en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000303932500028-
dc.citation.woscount3-
Appears in Collections:Articles


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