Threading Dislocation Blocking in Metamorphic InGaAs/GaAs for Growing High-Quality In0.5Ga0.5As and In0.3Ga0.7As on GaAs Substrate by Using Metal Organic Chemical Vapor Deposition

Title:	Threading Dislocation Blocking in Metamorphic InGaAs/GaAs for Growing High-Quality In0.5Ga0.5As and In0.3Ga0.7As on GaAs Substrate by Using Metal Organic Chemical Vapor Deposition
Authors:	Hong-Quan Nguyen Chang, Edward Yi Yu, Hung-Wei Hai-Dang Trinh Dee, Chang-Fu Wong, Yuen-Yee Hsu, Ching-Hsiang Binh-Tinh Tran Chung, Chen-Chen 材料科學與工程學系電子工程學系及電子研究所 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics
Issue Date:	1-May-2012
Abstract:	High quality In0.3Ga0.7As and In0.51Ga0.49As epilayers have been successfully grown on the GaAs substrate by MOCVD. A cross-sectional study by transmission electron microscopy showed that the threading dislocations (TDs) have been successfully contained and limited within the buffer layers designed to stop the elongation of TDs into the In0.3Ga0.7As and In0.51Ga0.49As epilayers. A TD density of 1 x 10(6) cm(-2) in a fully relaxed In0.51Ga0.49As epilayer was achieved. The measurement of lifetimes of n- and p-type In0.51Ga0.49As has been done by using time-resolved photoluminescence. A great reduction in the number of recombination centers in the InGaAs epilayer has been shown. (c) 2012 The Japan Society of Applied Physics
URI:	http://dx.doi.org/055503 http://hdl.handle.net/11536/16331
ISSN:	1882-0778
DOI:	055503
Journal:	APPLIED PHYSICS EXPRESS
Volume:	5
Issue:	5
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Appears in Collections:	Articles

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