統計資料
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| Random Work-Function-Induced Threshold Voltage Fluctuation in Metal-Gate MOS Devices by Monte Carlo Simulation | 100 |
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| Random Work-Function-Induced Threshold Voltage Fluctuation in Metal-Gate MOS Devices by Monte Carlo Simulation | 100 |
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| 000303999400017.pdf | 5 |
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| 中國 | 94 |
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