Growth of SiC films on Si(100) by electron cyclotron resonance chemical vapor deposition using SiH4/CH4/H-2

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DC Field	Value	Language
dc.contributor.author	Liu, CC	en_US
dc.contributor.author	Lee, CP	en_US
dc.contributor.author	Cheng, KL	en_US
dc.contributor.author	Cheng, HC	en_US
dc.contributor.author	Yew, TR	en_US
dc.date.accessioned	2014-12-08T15:03:03Z	-
dc.date.available	2014-12-08T15:03:03Z	-
dc.date.issued	1995-12-01	en_US
dc.identifier.issn	0013-4651	en_US
dc.identifier.uri	http://hdl.handle.net/11536/1643	-
dc.description.abstract	SiC films were deposited on Si(100) substrates by electron cyclotron resonance chemical vapor deposition at 500 degrees C using SiH4/CH4/H-2 gas mixtures. The chemical composition and crystalline microstructure were investigated by x-ray photoelectron spectroscopy and cross-sectional transmission electron microscopy, respectively. The film composition and microstructure are correlated to process variables. The deposition mechanism which controls the film characteristics is presented.	en_US
dc.language.iso	en_US	en_US
dc.title	Growth of SiC films on Si(100) by electron cyclotron resonance chemical vapor deposition using SiH4/CH4/H-2	en_US
dc.type	Article	en_US
dc.identifier.journal	JOURNAL OF THE ELECTROCHEMICAL SOCIETY	en_US
dc.citation.volume	142	en_US
dc.citation.issue	12	en_US
dc.citation.spage	4279	en_US
dc.citation.epage	4284	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1995TL12000052	-
dc.citation.woscount	7	-
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