Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxide

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Cheng, C. H.	en_US
dc.contributor.author	Chen, P. C.	en_US
dc.contributor.author	Wu, Y. H.	en_US
dc.contributor.author	Wu, M. J.	en_US
dc.contributor.author	Yeh, F. S.	en_US
dc.contributor.author	Chin, Albert	en_US
dc.date.accessioned	2014-12-08T15:23:32Z	-
dc.date.available	2014-12-08T15:23:32Z	-
dc.date.issued	2012-07-01	en_US
dc.identifier.issn	0038-1101	en_US
dc.identifier.uri	http://hdl.handle.net/11536/16458	-
dc.description.abstract	Highly uniform current distributions of high resistance state (HRS) and low resistance state (LRS), low 0.6 pJ switching energy, fast 30 ns switching speed, and good 10(6) cycling endurance are achieved in Ni/GeOx/Ta2O5-yNy/TaN resistive random access memory (RRAM) devices. Such good performance is attributed to nitrogen-related acceptor level in Ta2O5-yNy for better hopping conduction, which leads to forming-free resistive switching and low self-compliance switching currents. (C) 2012 Elsevier Ltd. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	Hopping conduction	en_US
dc.subject	Uniformity	en_US
dc.subject	TaON	en_US
dc.subject	RRAM	en_US
dc.subject	GeOx	en_US
dc.title	Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxide	en_US
dc.type	Article	en_US
dc.identifier.journal	SOLID-STATE ELECTRONICS	en_US
dc.citation.volume	73	en_US
dc.citation.issue		en_US
dc.citation.epage	60	en_US
dc.contributor.department	機械工程學系	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Mechanical Engineering	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000305661200012	-
dc.citation.woscount	8	-
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