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dc.contributor.authorCheng, C. H.en_US
dc.contributor.authorChen, P. C.en_US
dc.contributor.authorWu, Y. H.en_US
dc.contributor.authorWu, M. J.en_US
dc.contributor.authorYeh, F. S.en_US
dc.contributor.authorChin, Alberten_US
dc.date.accessioned2014-12-08T15:23:32Z-
dc.date.available2014-12-08T15:23:32Z-
dc.date.issued2012-07-01en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://hdl.handle.net/11536/16458-
dc.description.abstractHighly uniform current distributions of high resistance state (HRS) and low resistance state (LRS), low 0.6 pJ switching energy, fast 30 ns switching speed, and good 10(6) cycling endurance are achieved in Ni/GeOx/Ta2O5-yNy/TaN resistive random access memory (RRAM) devices. Such good performance is attributed to nitrogen-related acceptor level in Ta2O5-yNy for better hopping conduction, which leads to forming-free resistive switching and low self-compliance switching currents. (C) 2012 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectHopping conductionen_US
dc.subjectUniformityen_US
dc.subjectTaONen_US
dc.subjectRRAMen_US
dc.subjectGeOxen_US
dc.titleHighly uniform low-power resistive memory using nitrogen-doped tantalum pentoxideen_US
dc.typeArticleen_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.citation.volume73en_US
dc.citation.issueen_US
dc.citation.epage60en_US
dc.contributor.department機械工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Mechanical Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000305661200012-
dc.citation.woscount8-
Appears in Collections:Articles


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