標題: | Fabrication and characterization of n-In0.4Ga0.6N/p-Si solar cell |
作者: | Tran, Binh-Tinh Chang, Edward-Yi Trinh, Hai-Dang Lee, Ching-Ting Sahoo, Kartika Chandra Lin, Kung-Liang Huang, Man-Chi Yu, Hung-Wei Luong, Tien-Tung Chung, Chen-Chen Nguyen, Chi-Lang 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | MOCVD;InGaN;Si;Solar cell;ITO |
公開日期: | 1-Jul-2012 |
摘要: | Electro-optic characteristics of a fabricated n-In0.4Ga0.6N/p-Si hetero-structure solar cell on Si substrate with Al and ITO (or Ti/Al/Ni/Au) materials for p and n-type contacts were investigated in this letter. The solar cell devices with ITO as n-type contacts were also compared to the solar cell using Ti/Al/Ni/Au as n-type contact in this study. High short-circuit current density observed for solar cell with ITO as n-type contacts due to the increased amount of light reaching the solar cell. The device with ITO contact exhibited an open-circuit voltage (V-oc) of 1.52 V and a short-circuit current density (J(sc)) of 8.68 mA/cm(2) with 54% fill factor. The conversion and external quantum efficiency (EQE) of the solar cell were 7.12 and 20.8%, respectively. Besides, a relationship between V-oc and In content in the InxGa1-xN alloys for this type of solar cell was also derived. (C) 2012 Elsevier B.V. All rights reserved. |
URI: | http://hdl.handle.net/11536/16462 |
ISSN: | 0927-0248 |
期刊: | SOLAR ENERGY MATERIALS AND SOLAR CELLS |
Volume: | 102 |
Issue: | |
結束頁: | 208 |
Appears in Collections: | Articles |
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