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dc.contributor.authorChiang, Kuo-Changen_US
dc.contributor.authorHsieh, Tsung-Eongen_US
dc.date.accessioned2014-12-08T15:23:35Z-
dc.date.available2014-12-08T15:23:35Z-
dc.date.issued2012-06-08en_US
dc.identifier.issn0957-4484en_US
dc.identifier.urihttp://dx.doi.org/225703en_US
dc.identifier.urihttp://hdl.handle.net/11536/16485-
dc.description.abstractAn extremely large memory window shift of about 30.7 V and high charge storage density = 2.3 x 10(13) cm(-2) at +/- 23 V gate voltage sweep were achieved in the nonvolatile floating gate memory (NFGM) device containing the AgInSbTe (AIST)-SiO2 nanocomposite as the charge trap layer and HfO2/SiO2 as the blocking oxide layer. Due to the deep trap sites formed by high-density AIST nanocrystals (NCs) in the nanocomposite matrix and the high-barrier-height feature of the composite blocking oxide layer, a good retention property of the device with a charge loss of about 16.1% at +/- 15 V gate voltage stress for 10(4) s at the test temperature of 85 degrees C was observed. In addition to inhibiting the Hf diffusion into the programming layer, incorporation of the SiO2 layer prepared by plasma-enhanced chemical vapor deposition in the sample provided a good Coulomb blockade effect and allowed significant charge storage in AIST NCs. Analytical results demonstrated the feasibility of an AIST-SiO2 nanocomposite layer in memory device fabrication with a simplified processing method and post-annealing at a comparatively low temperature of 400 degrees C in comparison with previous NC-based NFGM studies.en_US
dc.language.isoen_USen_US
dc.titleNonvolatile floating gate memory containing AgInSbTe-SiO2 nanocomposite layer and capping the HfO2/SiO2 composite blocking oxide layeren_US
dc.typeArticleen_US
dc.identifier.doi225703en_US
dc.identifier.journalNANOTECHNOLOGYen_US
dc.citation.volume23en_US
dc.citation.issue22en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000305160300016-
dc.citation.woscount1-
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