完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chiang, Kuo-Chang | en_US |
dc.contributor.author | Hsieh, Tsung-Eong | en_US |
dc.date.accessioned | 2014-12-08T15:23:35Z | - |
dc.date.available | 2014-12-08T15:23:35Z | - |
dc.date.issued | 2012-06-08 | en_US |
dc.identifier.issn | 0957-4484 | en_US |
dc.identifier.uri | http://dx.doi.org/225703 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/16485 | - |
dc.description.abstract | An extremely large memory window shift of about 30.7 V and high charge storage density = 2.3 x 10(13) cm(-2) at +/- 23 V gate voltage sweep were achieved in the nonvolatile floating gate memory (NFGM) device containing the AgInSbTe (AIST)-SiO2 nanocomposite as the charge trap layer and HfO2/SiO2 as the blocking oxide layer. Due to the deep trap sites formed by high-density AIST nanocrystals (NCs) in the nanocomposite matrix and the high-barrier-height feature of the composite blocking oxide layer, a good retention property of the device with a charge loss of about 16.1% at +/- 15 V gate voltage stress for 10(4) s at the test temperature of 85 degrees C was observed. In addition to inhibiting the Hf diffusion into the programming layer, incorporation of the SiO2 layer prepared by plasma-enhanced chemical vapor deposition in the sample provided a good Coulomb blockade effect and allowed significant charge storage in AIST NCs. Analytical results demonstrated the feasibility of an AIST-SiO2 nanocomposite layer in memory device fabrication with a simplified processing method and post-annealing at a comparatively low temperature of 400 degrees C in comparison with previous NC-based NFGM studies. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Nonvolatile floating gate memory containing AgInSbTe-SiO2 nanocomposite layer and capping the HfO2/SiO2 composite blocking oxide layer | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 225703 | en_US |
dc.identifier.journal | NANOTECHNOLOGY | en_US |
dc.citation.volume | 23 | en_US |
dc.citation.issue | 22 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000305160300016 | - |
dc.citation.woscount | 1 | - |
顯示於類別: | 期刊論文 |