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dc.contributor.authorWu, Chi-Changen_US
dc.contributor.authorPan, Tung-Mingen_US
dc.contributor.authorWu, Chung-Shuen_US
dc.contributor.authorYen, Li-Chenen_US
dc.contributor.authorChuang, Cheng-Kengen_US
dc.contributor.authorPang, See-Tongen_US
dc.contributor.authorYang, Yuh-Shyongen_US
dc.contributor.authorKo, Fu-Hsiangen_US
dc.date.accessioned2014-12-08T15:23:43Z-
dc.date.available2014-12-08T15:23:43Z-
dc.date.issued2012-05-01en_US
dc.identifier.issn1452-3981en_US
dc.identifier.urihttp://hdl.handle.net/11536/16541-
dc.description.abstractIn this study, we proposed a silicon nanobelt field-effect transistor (FET) to detect prostate specific antigen (PSA). The nanobelt FET device displayed n-channel depletion characteristics. The immobilization of prostate specific antibody (anti-PSA) molecules was attached onto the nanobelt FET surface by using the aldehyde groups of glutaraldehyde linked to the amino groups of 3-aminopropyltriethoxysilane (APTES). The shift in the drain current vs time curves of a nanobelt FET biosensor revealed that the electrical signal had a logarithmic relationship with respect to the concentration of the PSA, and detection capability was estimated in the 5 pg/mL level. To enhance the sensitivity of a nanobelt FET biosensor, this biosensor was designed by inserting arginine molecules between glutaraldehyde and APTES. Therefore, the detection capability of the developed sensor was extended to 50 fg/mL. Also, the relationship between the current shift and the logarithm of PSA concentration was exhibited linearity in the range 50 fg/mL - 500 pg/mL. The excellent electrical results of this label-free PSA nanobelt FET biosensor suggested that such biosensor might be potentially useful tools for biological research and future prostate cancer screening.en_US
dc.language.isoen_USen_US
dc.subjectNanobelten_US
dc.subjectField-effect Transistoren_US
dc.subjectBiosensoren_US
dc.subjectProstate Specific Antigenen_US
dc.subjectLabel-free Detectionen_US
dc.titleLabel-free Detection of Prostate Specific Antigen Using a Silicon Nanobelt Field-effect Transistoren_US
dc.typeArticleen_US
dc.identifier.journalINTERNATIONAL JOURNAL OF ELECTROCHEMICAL SCIENCEen_US
dc.citation.volume7en_US
dc.citation.issue5en_US
dc.citation.epage4432en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000305267000050-
dc.citation.woscount8-
Appears in Collections:Articles