BORON INCORPORATION IN SI1-XGEX FILMS GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION USING SI2H6 AND GEH4

doi:10.1063/1.114932

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	CHEN, LP	en_US
dc.contributor.author	CHOU, CT	en_US
dc.contributor.author	HUANG, GW	en_US
dc.contributor.author	TSAI, WC	en_US
dc.contributor.author	CHANG, CY	en_US
dc.date.accessioned	2014-12-08T15:03:04Z	-
dc.date.available	2014-12-08T15:03:04Z	-
dc.date.issued	1995-11-13	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.114932	en_US
dc.identifier.uri	http://hdl.handle.net/11536/1656	-
dc.description.abstract	0.1% B2H6 diluted in hydrogen is used as the p-type dopant gas in Si1-xGex grown by ultrahigh vacuum chemical vapor deposition (UHVCVD) using Si2H6 and GeH4. The boron concentration is evaluated by secondary ion mass spectrometry (SIMS). The boron concentration of Si1-xGex increases with the increase of the GeH4 flow rate, that is, Ge fraction, by keeping Si2H6 and B2H6 how rates constant. The result may be due to the increase of the vacant surface sites which is caused by the increase of the hydrogen desorption rate when a higher Ge fraction epilayer is grown. (C) 1995 American Institute of Physics.	en_US
dc.language.iso	en_US	en_US
dc.title	BORON INCORPORATION IN SI1-XGEX FILMS GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION USING SI2H6 AND GEH4	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.114932	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	67	en_US
dc.citation.issue	20	en_US
dc.citation.spage	3001	en_US
dc.citation.epage	3003	en_US
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1995TE38500035	-
dc.citation.woscount	14	-
顯示於類別：	期刊論文