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dc.contributor.authorCHEN, LPen_US
dc.contributor.authorCHOU, CTen_US
dc.contributor.authorHUANG, GWen_US
dc.contributor.authorTSAI, WCen_US
dc.contributor.authorCHANG, CYen_US
dc.date.accessioned2014-12-08T15:03:04Z-
dc.date.available2014-12-08T15:03:04Z-
dc.date.issued1995-11-13en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.114932en_US
dc.identifier.urihttp://hdl.handle.net/11536/1656-
dc.description.abstract0.1% B2H6 diluted in hydrogen is used as the p-type dopant gas in Si1-xGex grown by ultrahigh vacuum chemical vapor deposition (UHVCVD) using Si2H6 and GeH4. The boron concentration is evaluated by secondary ion mass spectrometry (SIMS). The boron concentration of Si1-xGex increases with the increase of the GeH4 flow rate, that is, Ge fraction, by keeping Si2H6 and B2H6 how rates constant. The result may be due to the increase of the vacant surface sites which is caused by the increase of the hydrogen desorption rate when a higher Ge fraction epilayer is grown. (C) 1995 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleBORON INCORPORATION IN SI1-XGEX FILMS GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION USING SI2H6 AND GEH4en_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.114932en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume67en_US
dc.citation.issue20en_US
dc.citation.spage3001en_US
dc.citation.epage3003en_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:A1995TE38500035-
dc.citation.woscount14-
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