Demonstration of using injection-locked Fabry-Perot laser diode for 10 Gbit/s 16-QAM OFDM WDM-PON

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DC 欄位	值	語言
dc.contributor.author	Yeh, C. H.	en_US
dc.contributor.author	Chow, C. W.	en_US
dc.contributor.author	Chen, H. Y.	en_US
dc.contributor.author	Sung, J. Y.	en_US
dc.contributor.author	Liu, Y. L.	en_US
dc.date.accessioned	2014-12-08T15:23:53Z	-
dc.date.available	2014-12-08T15:23:53Z	-
dc.date.issued	1970-01-01	en_US
dc.identifier.issn	0013-5194	en_US
dc.identifier.uri	http://hdl.handle.net/11536/16620	-
dc.description.abstract	"A 10 Gbit/s OFDM upstream transmission has been investigated by using a Fabry-Perot laser diode (FP-LD) based ONU with seeding-light in a colourless WDM-PON. Also demonstrated is the relationship of CW injection power and SNR of each OFDM subcarrier for a modelocked FP-LD. Moreover, when a 16-QAM OFDM modulation is applied in a modelocked FP-LD, -15.7 dBm received sensitivity at the BER of 3.8 x 10(-3) can be obtained after 20 km fibre transmission."	en_US
dc.language.iso	en_US	en_US
dc.title	Demonstration of using injection-locked Fabry-Perot laser diode for 10 Gbit/s 16-QAM OFDM WDM-PON	en_US
dc.type	Article	en_US
dc.identifier.journal	ELECTRONICS LETTERS	en_US
dc.citation.volume	48	en_US
dc.citation.issue	15	en_US
dc.citation.epage	940	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000306711700033	-
dc.citation.woscount	3	-
顯示於類別：	期刊論文

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