標題: Type-II GaSb/GaAs coupled quantum rings: Room-temperature luminescence enhancement and recombination lifetime elongation for device applications
作者: Lin, Wei-Hsun
Wang, Kai-Wei
Chang, Shu-Wei
Shih, Min-Hsiung
Lin, Shih-Yen
光電學院
College of Photonics
公開日期: 1-Jan-1970
摘要: Type-II GaSb/GaAs coupled quantum rings have exhibited two-order-of-magnitude luminescence enhancement and ten-times elongation of recombination lifetime at room temperature as compared with regular rings. The longer lifetime suggests that a significant amount of electrons are confined in coupled rings rather than simply leaking away. These phenomena indicate that type-II nanostructures can be potentially utilized for room-temperature luminescence and carrier storage applications. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4737443]
URI: http://dx.doi.org/31906
http://hdl.handle.net/11536/16626
ISSN: 0003-6951
DOI: 31906
期刊: APPLIED PHYSICS LETTERS
Volume: 101
Issue: 3
結束頁: 
Appears in Collections:Articles


Files in This Item:

  1. 000306748000027.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.