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dc.contributor.authorZan, Hsiao-Wenen_US
dc.contributor.authorLi, Chang-Hungen_US
dc.contributor.authorYu, Chih-Kuanen_US
dc.contributor.authorMeng, Hsin-Feien_US
dc.date.accessioned2014-12-08T15:23:54Z-
dc.date.available2014-12-08T15:23:54Z-
dc.date.issued1970-01-01en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/23303en_US
dc.identifier.urihttp://hdl.handle.net/11536/16630-
dc.description.abstract"We report a very sensitive gas sensor embedded in a vertical polymer space-charge-limited transistor. The oxidizing and reducing gases act as electron dedoping and electron doping agents on the transistor active layer to change the potential distribution in the vertical channel and hence to change the output current density. With a 30-ppb detection limit to ammonia, the sensor can be used for non-invasive breath monitor in point-of-care applications. The integration of a sensitive gas sensor and a low-operation-voltage transistor in one single device also facilitates the development of low-cost and low-power-consumption sensor array. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4734498]"en_US
dc.language.isoen_USen_US
dc.titleSensitive gas sensor embedded in a vertical polymer space-charge-limited transistoren_US
dc.typeArticleen_US
dc.identifier.doi23303en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume101en_US
dc.citation.issue2en_US
dc.citation.epageen_US
dc.contributor.department物理研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000306360600088-
dc.citation.woscount2-
Appears in Collections:Articles


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