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dc.contributor.authorYao, I. -Chuanen_US
dc.contributor.authorLin, Pangen_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.date.accessioned2014-12-08T15:23:56Z-
dc.date.available2014-12-08T15:23:56Z-
dc.date.issued2012-07-01en_US
dc.identifier.issn1536-125Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/16653-
dc.description.abstract"Fabrication, optical, and field emission properties of ZnO nanorod, nanopagoda, and nanotip emitters were studied. The ZnO nanotip emitters are prepared by using combination of solution method and oxygen plasma treatment. All the emitters exhibit a highly c-axis preferred orientation crystalline structure. The nanopagoda and nanotip emitters have turn-on fields of 1.43 and 1.07 V/mu m, respectively, under 1 mu A/cm(2) and field enhancement factors of 3681 and 4735 at 25 degrees C, respectively. The nanotip emitters with tip angle of 20 degrees and number density of 10 emitters/mu m(2) have very stable emission at 25 degrees C over 2 x 10(4) s and successive operation between the 25 degrees C and 100 degrees C over 5000 s. Our finding provides an effective route for practical applications in flat panel display and light-emitting device in the future."en_US
dc.language.isoen_USen_US
dc.title"Field Emission Properties and Reliability of ZnO Nanorod, Nanopagoda, and Nanotip Current Emitters"en_US
dc.typeArticleen_US
dc.identifier.journalIEEE TRANSACTIONS ON NANOTECHNOLOGYen_US
dc.citation.volume11en_US
dc.citation.issue4en_US
dc.citation.spageen_US
dc.citation.epage746en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
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