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dc.contributor.authorChang, Yung-Huangen_US
dc.contributor.authorLiu, Chien-Minen_US
dc.contributor.authorChen, Chihen_US
dc.contributor.authorCheng, Hsyi-Enen_US
dc.date.accessioned2014-12-08T15:23:57Z-
dc.date.available2014-12-08T15:23:57Z-
dc.date.issued1970-01-01en_US
dc.identifier.issn1931-7573en_US
dc.identifier.urihttp://dx.doi.org/231en_US
dc.identifier.urihttp://hdl.handle.net/11536/16668-
dc.description.abstract"The heterojunction effects of TiO2 nanotubes on photoconductive characteristics were investigated. For ITO/TiO2/Si diodes, the photocurrent is controlled either by the TiO2/Si heterojunction (p-n junction) or the ITO-TiO2 heterojunction (Schottky contact). In the short circuit (approximately 0 V) condition, the TiO2-Si heterojunction dominates the photocarrier transportation direction due to its larger space-charge region and potential gradient. The detailed transition process of the photocarrier direction was investigated with a time-dependent photoresponse study. The results showed that the diode transitioned from TiO2-Si heterojunction-controlled to ITO-TiO2 heterojunction-controlled as we applied biases from approximately 0 to -1 V on the ITO electrode."en_US
dc.language.isoen_USen_US
dc.titleThe heterojunction effects of TiO2 nanotubes fabricated by atomic layer deposition on photocarrier transportation directionen_US
dc.typeArticleen_US
dc.identifier.doi231en_US
dc.identifier.journalNANOSCALE RESEARCH LETTERSen_US
dc.citation.volume7en_US
dc.citation.issueen_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000306492800001-
dc.citation.woscount7-
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