標題: Characteristics Variability of Novel Lateral Asymmetry Nano-MOSFETs due to Random Discrete Dopant
作者: Lee, Kou-Fu
Hwang, Chih-Hong
Li, Tien-Yeh
Li, Yiming
電信工程研究所
Institute of Communications Engineering
關鍵字: Modeling and Simulation;Random dopant fluctuation;High Frequency Characteristics;Fluctuation suppression
公開日期: 2009
摘要: In nanoscale silicon FETs, the lateral asymmetric channel (LAC) devices with higher channel doping concentration near the source-end have shown better control of the short channel effects. However, such asymmetric doping profile may introduce different fluctuations in device characteristics. In this paper, the asymmetric sketch of random dopants distribution near source and drain sides in 16 nm bulk MOSFETs' channel is explored. Discrete dopants distributed near-source end and near-drain end of channel region induce rather different fluctuations of gate capacitance and high frequency characteristics. The proposed inverse lateral asymmetry doping profile can effectively suppress both the DC and high frequency characteristic fluctuations, which may benefit the design of sub-20-nm MOSFETs.
URI: http://hdl.handle.net/11536/16713
ISBN: 978-1-4398-1782-7
期刊: NANOTECH CONFERENCE & EXPO 2009, VOL 1, TECHNICAL PROCEEDINGS
起始頁: 602
結束頁: 605
Appears in Collections:Conferences Paper