Characteristics Variability of Novel Lateral Asymmetry Nano-MOSFETs due to Random Discrete Dopant

Abstract

In nanoscale silicon FETs, the lateral asymmetric channel (LAC) devices with higher channel doping concentration near the source-end have shown better control of the short channel effects. However, such asymmetric doping profile may introduce different fluctuations in device characteristics. In this paper, the asymmetric sketch of random dopants distribution near source and drain sides in 16 nm bulk MOSFETs' channel is explored. Discrete dopants distributed near-source end and near-drain end of channel region induce rather different fluctuations of gate capacitance and high frequency characteristics. The proposed inverse lateral asymmetry doping profile can effectively suppress both the DC and high frequency characteristic fluctuations, which may benefit the design of sub-20-nm MOSFETs.