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dc.contributor.authorLin, Yen-Fuen_US
dc.contributor.authorChiu, Shao-Chienen_US
dc.contributor.authorWang, Sheng-Tsungen_US
dc.contributor.authorFu, Sheng-Kaien_US
dc.contributor.authorChen, Chien-Hsiangen_US
dc.contributor.authorXie, Wen-Jiaen_US
dc.contributor.authorYang, Sheng-Hsiungen_US
dc.contributor.authorHsu, Chain-Shuen_US
dc.contributor.authorChen, Jenn-Fangen_US
dc.contributor.authorZhou, Xufengen_US
dc.contributor.authorLiu, Zhaopingen_US
dc.contributor.authorFang, Jiyeen_US
dc.contributor.authorJian, Wen-Binen_US
dc.date.accessioned2014-12-08T15:24:04Z-
dc.date.available2014-12-08T15:24:04Z-
dc.date.issued2012-08-01en_US
dc.identifier.issn0173-0835en_US
dc.identifier.urihttp://hdl.handle.net/11536/16737-
dc.description.abstract"DEP is one of promising techniques for positioning nanomaterials into the desirable location for nanoelectronic applications. In contrast, the lithography technique is commonly used to make ultra-thin conducting wires and narrow gaps but, due to the limit of patterning resolution, it is not feasible to make electrical contacts on ultra-small nanomaterials for a bottom-up device fabrication. Thus, integrating the lithography and dielectrophoresis, a real bottom-up fabrication can be achieved. In this work, the device with the nanogap in between two nanofinger-electrodes is made using electron-beam lithography from top down and the ultra-small nanomaterials, such as colloidal PbSe quantum dots, polyaniline nanofibers, and reduced-graphene-oxide flakes, are placed in the nanogap by DEP from bottom up. The threshold electric field for the DEP placement of PbSe nanocrystals was roughly estimated to be about 8.3 x 104 V/cm under our experimental configuration. After the DEP process, several procedures for reducing contact resistances are attempted and measurements of intrinsic electron transport in versatile nanomaterials are performed. It is experimentally confirmed that electron transport in both PbSe nanocrystal arrays and polyaniline nanofibers agrees well with Prof. Ping Sheng's model of granular metallic conduction. In addition, electron transport in reduced-graphene-oxide flakes follows Mott's 2D variable-range-hopping model. This study illustrates an integration of the electron-beam lithography and the DEP techniques for a precise manipulation of nanomaterials into electronic circuits for characterization of intrinsic properties."en_US
dc.language.isoen_USen_US
dc.title"Dielectrophoretic placement of quasi-zero-, one-, and two-dimensional nanomaterials into nanogap for electrical characterizations"en_US
dc.typeArticleen_US
dc.identifier.journalELECTROPHORESISen_US
dc.citation.volume33en_US
dc.citation.issue16en_US
dc.citation.spageen_US
dc.citation.epage2475en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Applied Chemistryen_US
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