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dc.contributor.authorHuang, Ting-Kaien_US
dc.contributor.authorHuang, Hsin-Weien_US
dc.contributor.authorLee, Chi-Youngen_US
dc.contributor.authorChiu, Hsin-Tienen_US
dc.date.accessioned2014-12-08T15:24:05Z-
dc.date.available2014-12-08T15:24:05Z-
dc.date.issued2012-08-01en_US
dc.identifier.issn0009-4536en_US
dc.identifier.urihttp://hdl.handle.net/11536/16743-
dc.description.abstract"We demonstrate a convenient fabrication of Au nanourchins (NUs) on Si substrates via a surfactant-assisted galvanic reduction process. This synthetic method not only grows Au NUs on Si in a one-step process but also effectively controls the lengths of the branches on the NUs. The widths are about 100-120 nm and the lengths can be extended from 200 nm to 5 mu m by lengthening the growth time. With the advantage of a hierarchical surface structure, Au NUs exhibited excellent electron field emission (FE) performance (turn-on voltage, 6.3 V/mu m; beta, 1150). In addition, the wetting behavior examination shows that the water contact angle can be as high as 158 degrees on Au NUs after the material is treated by 1-hexadecanethiol."en_US
dc.language.isoen_USen_US
dc.subjectGolden_US
dc.subjectNanourchinen_US
dc.subjectGalvanic reductionen_US
dc.subjectElectron field emissionen_US
dc.subjectSuperhydrophobicityen_US
dc.titleField Emission and Superhydrophobic Properties of Electrochemically Grown Gold Nanourchinsen_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF THE CHINESE CHEMICAL SOCIETYen_US
dc.citation.volume59en_US
dc.citation.issue8en_US
dc.citation.epage983en_US
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:000307426200009-
dc.citation.woscount0-
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