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dc.contributor.authorKuo, C. C.en_US
dc.contributor.authorLin, B. H.en_US
dc.contributor.authorYang, Songen_US
dc.contributor.authorLiu, W. R.en_US
dc.contributor.authorHsieh, W. F.en_US
dc.contributor.authorHsu, C-Hen_US
dc.date.accessioned2014-12-08T15:24:05Z-
dc.date.available2014-12-08T15:24:05Z-
dc.date.issued1970-01-01en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/11901en_US
dc.identifier.urihttp://hdl.handle.net/11536/16752-
dc.description.abstract"Small amount of (10 (1) over bar3)(ZnO) domains were found in the m-plane ZnO films grown on m-sapphire by pulsed laser deposition, which provide strain relaxation of the m-ZnO matrix behaving as a low strain layer. Through carefully correlating low-temperature polarized photoluminescence spectra with the x-ray diffraction peak intensity ratio of (10 (1) over bar3)(ZnO)/(10 (1) over bar0)(ZnO) of the samples grown at different temperature and after thermal treatment, we found that the broad-band emission around 3.17 eV may result from the interface defects trapped excitons at the boundaries between the (10 (1) over bar3)(ZnO) domains and the m-ZnO matrix. The more (10 (1) over bar3)(ZnO) domains in the m-ZnO layer cause the more surface boundary that makes the stronger surface-bound-exciton emission. And the a-axes of both the (10 (1) over bar3)(ZnO) domains and the m-ZnO matrix are aligned with the c-axis of the sapphire (alpha-Al2O3) substrate. The c-axis of the (10 (1) over bar3)(ZnO) domains rotates by about +/- 59 degrees against the common a-axis of the m-ZnO. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4732140]"en_US
dc.language.isoen_USen_US
dc.titleSurface-bound-exciton emission associated with domain interfaces in m-plane ZnO filmsen_US
dc.typeArticleen_US
dc.identifier.doi11901en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume101en_US
dc.citation.issue1en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000306144800014-
dc.citation.woscount3-
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