完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Kuo, C. C. | en_US |
dc.contributor.author | Lin, B. H. | en_US |
dc.contributor.author | Yang, Song | en_US |
dc.contributor.author | Liu, W. R. | en_US |
dc.contributor.author | Hsieh, W. F. | en_US |
dc.contributor.author | Hsu, C-H | en_US |
dc.date.accessioned | 2014-12-08T15:24:05Z | - |
dc.date.available | 2014-12-08T15:24:05Z | - |
dc.date.issued | 1970-01-01 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/11901 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/16752 | - |
dc.description.abstract | "Small amount of (10 (1) over bar3)(ZnO) domains were found in the m-plane ZnO films grown on m-sapphire by pulsed laser deposition, which provide strain relaxation of the m-ZnO matrix behaving as a low strain layer. Through carefully correlating low-temperature polarized photoluminescence spectra with the x-ray diffraction peak intensity ratio of (10 (1) over bar3)(ZnO)/(10 (1) over bar0)(ZnO) of the samples grown at different temperature and after thermal treatment, we found that the broad-band emission around 3.17 eV may result from the interface defects trapped excitons at the boundaries between the (10 (1) over bar3)(ZnO) domains and the m-ZnO matrix. The more (10 (1) over bar3)(ZnO) domains in the m-ZnO layer cause the more surface boundary that makes the stronger surface-bound-exciton emission. And the a-axes of both the (10 (1) over bar3)(ZnO) domains and the m-ZnO matrix are aligned with the c-axis of the sapphire (alpha-Al2O3) substrate. The c-axis of the (10 (1) over bar3)(ZnO) domains rotates by about +/- 59 degrees against the common a-axis of the m-ZnO. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4732140]" | en_US |
dc.language.iso | en_US | en_US |
dc.title | Surface-bound-exciton emission associated with domain interfaces in m-plane ZnO films | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 11901 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 101 | en_US |
dc.citation.issue | 1 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000306144800014 | - |
dc.citation.woscount | 3 | - |
顯示於類別: | 期刊論文 |