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dc.contributor.authorLin, Yow-Jonen_US
dc.contributor.authorTsao, Hou-Yenen_US
dc.contributor.authorLiu, Day-Shanen_US
dc.date.accessioned2014-12-08T15:24:05Z-
dc.date.available2014-12-08T15:24:05Z-
dc.date.issued1970-01-01en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/13302en_US
dc.identifier.urihttp://hdl.handle.net/11536/16753-
dc.description.abstractWe studied the Hall-effect mobility of pentacene films prepared by the thermal evaporating method with different substrate temperature. A crossover from coherent bandlike charge transport with mobilities up to several tens of cm(2)/V-s at low temperature to an incoherent hopping motion at high temperature is observed. The carrier mobilities of pentacene exhibit a hopping-to-band transition around room temperature. An exhibition of high mobility of pentacene films prepared with substrate temperature of 90 degrees C is attributed to the increased spacing between molecules. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4733293]en_US
dc.language.isoen_USen_US
dc.subjectHall mobilityen_US
dc.subjecthopping conductionen_US
dc.subjectmetal-insulator transitionen_US
dc.subjectorganic semiconductorsen_US
dc.subjectsemiconductor growthen_US
dc.subjectsemiconductor thin filmsen_US
dc.subjectvacuum depositionen_US
dc.titleHall-effect mobility of pentacene films prepared by the thermal evaporating method with different substrate temperatureen_US
dc.typeArticleen_US
dc.identifier.doi13302en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume101en_US
dc.citation.issue1en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000306144800076-
dc.citation.woscount11-
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