完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, Chung Wei | en_US |
dc.contributor.author | Ren, F. | en_US |
dc.contributor.author | Chi, Gou-Chung | en_US |
dc.contributor.author | Hung, S. C. | en_US |
dc.contributor.author | Huang, Y. P. | en_US |
dc.contributor.author | Kim, Jihyun | en_US |
dc.contributor.author | Kravchenko, Ivan | en_US |
dc.contributor.author | Pearton, Stephen J. | en_US |
dc.date.accessioned | 2014-12-08T15:24:06Z | - |
dc.date.available | 2014-12-08T15:24:06Z | - |
dc.date.issued | 2012-07-01 | en_US |
dc.identifier.issn | 1071-1023 | en_US |
dc.identifier.uri | http://dx.doi.org/40602 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/16761 | - |
dc.description.abstract | "Graphene layers on SiO2/Si substrates were exposed to chemicals or gases commonly used in semiconductor fabrication processes, including solvents (isopropanol, acetone), acids, bases (ammonium hydroxide), UV ozone, H2O, and O-2 plasmas. The recovery of the initial graphene properties after these exposures was monitored by measuring both the layer resistance and Raman 2D peak position as a function of time in air or vacuum. Solvents and UV ozone were found to have the least affect, while oxygen plasma exposure caused an increase of resistance of more than 3 orders of magnitude. Recovery is accelerated under vacuum but changes can persist for more than 5 h. Careful design of fabrication schemes involving graphene is necessary to minimize these interactions with common processing chemicals. (C) 2012 American Vacuum Society. [http://dx.doi.org/10.1116/1.4732517]" | en_US |
dc.language.iso | en_US | en_US |
dc.title | Effects of semiconductor processing chemicals on conductivity of graphene | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 40602 | en_US |
dc.identifier.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | en_US |
dc.citation.volume | 30 | en_US |
dc.citation.issue | 4 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000306750700013 | - |
dc.citation.woscount | 1 | - |
顯示於類別: | 期刊論文 |