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dc.contributor.authorWeng, Peng-Hsiangen_US
dc.contributor.authorWu, Tzeng-Tsongen_US
dc.contributor.authorLu, Tien-Changen_US
dc.date.accessioned2014-12-08T15:24:08Z-
dc.date.available2014-12-08T15:24:08Z-
dc.date.issued2012-11-01en_US
dc.identifier.issn1077-260Xen_US
dc.identifier.urihttp://dx.doi.org/10.1109/JSTQE.2011.2169237en_US
dc.identifier.urihttp://hdl.handle.net/11536/16796-
dc.description.abstractIn this paper, we have investigated the mode patterns in real space and reciprocal space, and threshold gain at different band edges in GaN-based photonic crystal surface-emitting lasers (PCSELs) by using the multiple-scattering method. The characteristics at each band edge (Gamma 1, K2, and M3) of PCSELs are simulated and discussed. In addition, GaN-based PCSELs operated at different band edges have been fabricated and measured. The experimental results of threshold show good agreement with the simulation results.en_US
dc.language.isoen_USen_US
dc.subjectDistributed feedback (DFB)en_US
dc.subjectGaNen_US
dc.subjectmultiple scatteringen_US
dc.subjectphotonic crystalen_US
dc.subjectsurface-emitting lasers (SELs)en_US
dc.titleStudy of Band-Edge Modes in GaN-Based Photonic Crystal Surface-Emitting Lasers by the Multiple-Scattering Methoden_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JSTQE.2011.2169237en_US
dc.identifier.journalIEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICSen_US
dc.citation.volume18en_US
dc.citation.issue6en_US
dc.citation.spage1629en_US
dc.citation.epage1635en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000308664900002-
dc.citation.woscount4-
Appears in Collections:Articles


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