Study of Band-Edge Modes in GaN-Based Photonic Crystal Surface-Emitting Lasers by the Multiple-Scattering Method

doi:10.1109/JSTQE.2011.2169237

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Weng, Peng-Hsiang	en_US
dc.contributor.author	Wu, Tzeng-Tsong	en_US
dc.contributor.author	Lu, Tien-Chang	en_US
dc.date.accessioned	2014-12-08T15:24:08Z	-
dc.date.available	2014-12-08T15:24:08Z	-
dc.date.issued	2012-11-01	en_US
dc.identifier.issn	1077-260X	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/JSTQE.2011.2169237	en_US
dc.identifier.uri	http://hdl.handle.net/11536/16796	-
dc.description.abstract	In this paper, we have investigated the mode patterns in real space and reciprocal space, and threshold gain at different band edges in GaN-based photonic crystal surface-emitting lasers (PCSELs) by using the multiple-scattering method. The characteristics at each band edge (Gamma 1, K2, and M3) of PCSELs are simulated and discussed. In addition, GaN-based PCSELs operated at different band edges have been fabricated and measured. The experimental results of threshold show good agreement with the simulation results.	en_US
dc.language.iso	en_US	en_US
dc.subject	Distributed feedback (DFB)	en_US
dc.subject	GaN	en_US
dc.subject	multiple scattering	en_US
dc.subject	photonic crystal	en_US
dc.subject	surface-emitting lasers (SELs)	en_US
dc.title	Study of Band-Edge Modes in GaN-Based Photonic Crystal Surface-Emitting Lasers by the Multiple-Scattering Method	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/JSTQE.2011.2169237	en_US
dc.identifier.journal	IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS	en_US
dc.citation.volume	18	en_US
dc.citation.issue	6	en_US
dc.citation.spage	1629	en_US
dc.citation.epage	1635	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000308664900002	-
dc.citation.woscount	4	-
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