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dc.contributor.authorLiao, Yu-Huaien_US
dc.contributor.authorLiao, Chien-Chihen_US
dc.contributor.authorKu, Chih-Haoen_US
dc.contributor.authorChang, Yu-Chenen_US
dc.contributor.authorCheng, Shun-Jenen_US
dc.contributor.authorJo, Masafumien_US
dc.contributor.authorKuroda, Takashien_US
dc.contributor.authorMano, Takaakien_US
dc.contributor.authorAbbarchi, Marcoen_US
dc.contributor.authorSakoda, Kazuakien_US
dc.date.accessioned2019-04-03T06:36:55Z-
dc.date.available2019-04-03T06:36:55Z-
dc.date.issued2012-09-17en_US
dc.identifier.issn1098-0121en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.86.115323en_US
dc.identifier.urihttp://hdl.handle.net/11536/16848-
dc.description.abstractWe report on experimental and theoretical investigations of the optical anisotropy of GaAs/AlGaAs quantum dots grown by droplet epitaxy. With in situ annealing in the growth, the shape of quantum dots is systematically controlled from a tall and laterally symmetric shape to a flat and laterally elongated one. Photoluminescence spectroscopy demonstrates an uncommon observation: the more elongated the quantum dots, the lower the degree of linear polarization. Theoretical analysis based on a four-band k center dot p theory reveals a substantial impact of vertical confinement on the valence heavy-hole and light-hole mixing, which leads to the enhancement of polarization anisotropy for taller quantum dots. The influence of Coulomb interactions on polarization anisotropy is studied by using the partial configuration interaction method, and is shown to reduce the polarization anisotropy through the mixing of single-particle configurations with different symmetries.en_US
dc.language.isoen_USen_US
dc.titleGeometrical impact on the optical polarization of droplet epitaxial quantum dotsen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.86.115323en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume86en_US
dc.citation.issue11en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000308866300002en_US
dc.citation.woscount18en_US
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